- PII
- S30345731S1028096025020129-1
- DOI
- 10.7868/S3034573125020129
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume / Issue number 2
- Pages
- 91-100
- Abstract
- Cu-Si systems are important for a wide range of technological applications. This work is devoted to the study of the influence of copper content on the formation of silicon oxide phases in Cu-Si films obtained by ion beam sputtering. According to X-ray diffraction and ultra-soft X-ray emission spectroscopy data in a film with a low copper content of ~15 wt. % silicon is partially in an amorphous state, and partially oxidized, forming a SiO suboxide. In films with a high copper content, Cu ~65 wt. % CuSi phase is formed, which leads to the formation of phases of SiO dioxide and SiO suboxide in both near-surface and deeper layers. X-ray photoelectron spectroscopy indicates the formatio. n of predominantly silicon-oxygen tetrahedra of the Si-SiO and SiO types for Cu ~15 wt. % and more oxygen-rich Si-SiO silicon-oxygen tetrahedra for Cu ~65 wt. %, both on the surface and in deep layers of Cu-Si films.
- Keywords
- ионно-лучевое распыление пленки Cu-Si CuSi [CuSi] ультрамягкая рентгеновская эмиссионная спектроскопия рентгеновская фотоэлектронная спектроскопия
- Date of publication
- 12.07.2024
- Year of publication
- 2024
- Number of purchasers
- 0
- Views
- 54
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