- PII
- S30345731S1028096025040106-1
- DOI
- 10.7868/S3034573125040106
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume / Issue number 4
- Pages
- 70-74
- Abstract
- The results of studying silicon oxide films obtained by plasma enhanced chemical vapor deposition on Si substrates are presented. They were implanted with Zn ions with an energy of 50 keV (dose 7×10 cm) and then annealed in oxygen atmosphere at elevated temperatures. It has been found that after implantation, zinc is distributed in the SiO film according to the normal law with a maximum of about 40 nm. After implantation, zinc is in the silicon oxide film both in the metallic phase (closer to the film surface) and in the oxidized state (in the film depth). After annealing up to 800°C, the zinc profile shifts into the film depth; in this case, the zinc is in the film only in the oxidized state. At high temperatures (over 800°C), the zinc profile shifts toward the film surface.
- Keywords
- Zn пленка SiO имплантация отжиг ZnO резерфордовское обратное рассеяние электронная оже-спектроскопия
- Date of publication
- 22.01.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 43
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