Везде

RAS PhysicsПоверхность. Рентгеновские, синхротронные и нейтронные исследования Journal of Surface Investigation. X-Ray, Synchrotron and Neutron Techniques

  • ISSN (Print) 1028-0960
  • ISSN (Online) 3034-5731

Structural Evolution of Nanoscale Ferroelectric HfZrO Layers as a Result of Their Cyclic Electrical Stimulation

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PII
S30345731S1028096025040011-1
DOI
10.7868/S3034573125040011
Publication type
Article
Status
Published
Authors
L.L. Lev
  • Affiliation: Moscow Institute of Physics and Technology
A.S. Konashuk
  • Affiliation: Institute of Physics, St. Petersburg State University
R.R. Khakimov
  • Affiliation: Moscow Institute of Physics and Technology
A.G. Chernikova
  • Affiliation: Moscow Institute of Physics and Technology
A.M. Markeev
  • Affiliation: Moscow Institute of Physics and Technology
A.M. Lebedev
  • Affiliation: Kurchatov Complex for Synchrotron and Neutron Investigations, National Research Center “Kurchatov Institute”
V.G. Nazin
  • Affiliation: Kurchatov Complex for Synchrotron and Neutron Investigations, National Research Center “Kurchatov Institute”
R.G. Chumakov
  • Affiliation: Kurchatov Complex for Synchrotron and Neutron Investigations, National Research Center “Kurchatov Institute”
A.V. Zenkevich
  • Affiliation: Moscow Institute of Physics and Technology
Volume/ Edition
Volume / Issue number 4
Pages
3-10
Abstract
Despite the large number of already published articles on the topic of ferroelectric properties of HfZrO (HZO), this material still attracts enormous attention of the scientific community due to the prospects for creating competitive non-volatile HZO-based memory devices compatible with modern silicon technology. Among the difficulties on the way to creating industrial technology for such devices is the instability of the residual polarization of the ferroelectric during multiple switching by an external electric field. In particular, at the initial stages of such “cycling”, as a rule, a significant increase in residual polarization is observed (the so-called “wake-up” effect), and then, after a certain number of cycles, its decrease (the so-called “fatigue” effect). The question of what processes lead to such instability remains debatable. Using the previously developed methodology for analyzing the phase composition of ultrathin HZO layers by the NEXAFS synchrotron radiation method, it is shown that in capacitors based on TiN/HZO/TiN structures, the “wake-up” effect observed during the first 105 switching cycles is explained by an increase in the relative content of the polar orthorhombic phase in HZO due to a decrease in the content of the “parasitic” tetragonal phase. The obtained results confirm the electric field-stimulated structural phase transition in films as one of the mechanisms explaining the evolution of the functional properties of ferroelectric memory elements based on HZO throughout their service life.
Keywords
атомно-слоевое осаждение сегнетоэлектричество HfZrO электрофизические свойства энергонезависимая память тонкая структура спектров поглощения рентгеновских лучей
Date of publication
27.12.2024
Year of publication
2024
Number of purchasers
0
Views
53

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