- PII
- S3034573125090036-1
- DOI
- 10.7868/S3034573125090036
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume / Issue number 9
- Pages
- 20-29
- Abstract
- In this work, oriented arrays of nanowires of InAs and InAs/InP core-shell nanoheterostructures based on NWs, synthesized by molecular beam epitaxy, were studied. A high surface density of NWs in the array was demonstrated (5–10 NWs/μm). High-resolution transmission electron microscopy data showed that with shell thicknesses up to 15–20 nm, pseudomorphic growth of InP is possible on the side faces of InAs NWs, and with shell thicknesses greater than 20 nm, complete relaxation of elastic stresses occurs. It was found that in radial heterostructured NWs with a thin InP shell, defects are formed only in the apex region, while no defect formation is observed at the radial heterointerface.
- Keywords
- молекулярно-пучковая эпитаксия нитевидные нанокристаллы наногетероструктуры InAs InP инфракрасное излучение
- Date of publication
- 06.02.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 4
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