RAS PhysicsПоверхность. Рентгеновские, синхротронные и нейтронные исследования Journal of Surface Investigation. X-Ray, Synchrotron and Neutron Techniques

  • ISSN (Print) 1028-0960
  • ISSN (Online) 3034-5731

Formation and Relaxation of Elastic Stress in Radial InAs/InP Nanoheterostructures

PII
S3034573125090036-1
DOI
10.7868/S3034573125090036
Publication type
Article
Status
Published
Authors
Volume/ Edition
Volume / Issue number 9
Pages
20-29
Abstract
In this work, oriented arrays of nanowires of InAs and InAs/InP core-shell nanoheterostructures based on NWs, synthesized by molecular beam epitaxy, were studied. A high surface density of NWs in the array was demonstrated (5–10 NWs/μm). High-resolution transmission electron microscopy data showed that with shell thicknesses up to 15–20 nm, pseudomorphic growth of InP is possible on the side faces of InAs NWs, and with shell thicknesses greater than 20 nm, complete relaxation of elastic stresses occurs. It was found that in radial heterostructured NWs with a thin InP shell, defects are formed only in the apex region, while no defect formation is observed at the radial heterointerface.
Keywords
молекулярно-пучковая эпитаксия нитевидные нанокристаллы наногетероструктуры InAs InP инфракрасное излучение
Date of publication
06.02.2025
Year of publication
2025
Number of purchasers
0
Views
4

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